TCAD Simulation of the Electrical Characteristics of Polycrystalline Silicon Thin Film Transistor

Electrical Characteristics of Polycrystalline Silicon

  • Hadjira Tayoub Applied Microelectronic Laboratory, Department of Electronic, University of Sidi Bel Abbes 22000, Algeria
  • Baya Zebentouta Research Center in Industrial Technologies, CRTI, P.O. Box 64, Cheraga, 16014 Algiers, Algeria
  • Zineb Benamara Applied Microelectronic Laboratory, Department of Electronic, University of Sidi Bel Abbes 22000, Algeria
Keywords: poly-Si TFT, transfer characteristics, low temperature, TCAD

Abstract

 

 Low-temperature polycrystalline silicon thin film transistors (poly-Si TFTs) have been studied because of their high performance in Active Matrix Liquid Crystal Displays (AMLCD's) and Active Matrix Organic Light-Emitting Diode (AMOLED) applications. The purpose of this work is to simulate the impact of varying the electrical and physical parameters (the interface states, active layer's thickness and BBT model) in the transfer characteristics of poly-Si TFT to extract the electrical parameters like the threshold voltage, the mobility and to evaluate the device performance. The device was simulated using ATLAS software from Silvaco, the results show that the electrical and physical parameters of poly-Si TFT affect significantly its transfer characteristics, choosing suitable parameters improve high-performance transistor. Such results make the designed structure a promising element for large-scale electronics applications.

 

 

 

Published
2020-07-15